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BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
DESCRIPTION
BS62LV2565
* Wide Vcc operation voltage : 4.5V ~ 5.5V * Very low power consumption : Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current * High speed access time : -55 55ns (Max.) = 5.0V -70 70ns (Max.) = 5.0V * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation * Data retention supply voltage as low as 1.5V * Easy expansion with CE and OE options
The BS62LV2565 is a high performance, very low power CMOS Static Random Access Memory organized as 32,768 words by 8 bits and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.4uA and maximum access time of 55ns in 5V operation. Easy memory expansion is provided by an active LOW chip enable(CE) , and active LOW output enable(OE) and three-state output drivers. The BS62LV2565 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV2565 is available in the JEDEC standard 28 pin 330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and 8mmx13.4mm TSOP (normal type).
PRODUCT FAMILY
PRODUCT FAMILY BS62LV2565SC BS62LV2565TC BS62LV2565PC BS62LV2565JC BS62LV2565DC BS62LV2565SI BS62LV2565TI BS62LV2565PI BS62LV2565JI BS62LV2565DI OPERATING TEMPERATURE Vcc RANGE SPEED (ns)
Vcc=5.0V
(I CCSB1 , Max) Vcc=5.0V
POWER DISSIPATION STANDBY Operating
(I CC , Max) Vcc=5.0V
PKG TYPE SOP-28 TSOP-28 PDIP-28 SOJ-28 DICE SOP-28 TSOP-28 PDIP-28 SOJ-28 DICE
0 C to +70 C
O
O
4.5V ~ 5.5V
55 / 70
1.0uA
35mA
-40 C to +85 C
O
O
4.5V ~ 5.5V
55 / 70
2.0uA
40mA
PIN CONFIGURATIONS
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14
BS62LV2565SC BS62LV2565SI BS62LV2565PC BS62LV2565PI BS62LV2565JC BS62LV2565JI
BLOCK DIAGRAM
28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 8 Data Input Buffer 8 A5 A6 A7 A12 A14 A13 A8 A9 A11 Buffer
*
Address Input
18
Row Decoder
512
Memory Array 512 x 512
512 Column I/O Write Driver Sense Amp 64 Column Decoder 12 CE WE OE Vdd Gnd A4 A3 A2 A1 A0 A10 Control Address Input Buffer
OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
BS62LV2565TC BS62LV2565TI
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2
8
Data Output Buffer
8
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62LV2565
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1
Revision 2.3 Jan. 2004
BSI
PIN DESCRIPTIONS
BS62LV2565
Function
These 15 address input select one of the 32768 x 8-bit wordsin the RAM CE is active LOW. Chip enables must be active to read from or write to the device. If chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. These 8 bi-directional ports are used to read data from or write data into the RAM. Power Supply Ground
Name
A0-A14 Address Input CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
DQ0-DQ7 Data Input/Output Ports Vcc Gnd
TRUTH TABLE
MODE Not selected Output Disabled Read Write WE X H H L CE H L L L OE X H L X I/O OPERATION High Z High Z DOUT DIN Vcc CURRENT ICCSB, ICCSB1 ICC ICC ICC
ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL V TERM T BIAS T STG PT I OUT PARAMETER
Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current
OPERATING RANGE
UNITS
V
O
RATING
-0.5 to +6.0 -40 to +125 -60 to +150 1.0 20
RANGE
Commercial Industrial
AMBIENT TEMPERATURE
0 O C to +70 O C -40 O C to +85 O C
Vcc
4.5V ~ 5.5V 4.5V ~ 5.5V
C C
O
W mA
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CIN CDQ
PARAMETER Input Capacitance Input/Output Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V VI/O=0V
6 8
pF pF
1. This parameter is guaranteed and not 100% tested.
R0201-BS62LV2565
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Revision 2.3 Jan. 2004
BSI
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER NAME
VIL VIH IIL ILO VOL VOH ICC ICCSB ICCSB1
BS62LV2565
TEST CONDITIONS
Vcc=5.0V
PARAMETER
Guaranteed Input Low (2) Voltage Guaranteed Input High (2) Voltage Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Operating Supply Current Power
MIN.
-0.5 2.2 --Vcc=5.0V Vcc=5.0V
TYP. (1)
--------0.4
MAX.
0.8 Vcc+0.2 1 1 0.4 -35 2 1.0
UNITS V V uA uA V V mA mA uA
Vcc=5.0V
Vcc = Max, VIN = 0V to Vcc Vcc = Max, CE = VIH, or OE = VIH, VI/O = 0V to Vcc Vcc = Max, IOL = 2mA Vcc = Min, IOH = -1mA CE = VIL, IDQ = 0mA, F = Fmax CE = VIH, IDQ = 0mA CE Vcc-0.2V, VIN Vcc - 0.2V or VIN 0.2V
(3) Vcc=5.0V
-2.4 ----
Standby Current-TTL Standby Current-CMOS
Vcc=5.0V
Vcc=5.0V
1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
SYMBOL
VDR ICCDR tCDR tR
PARAMETER
Vcc for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time
TEST CONDITIONS
CE Vcc - 0.2V VIN Vcc - 0.2V or VIN 0.2V CE Vcc -0.2V VIN Vcc - 0.2V or VIN 0.2V See Retention Waveform
MIN.
1.5 -0 TRC (2)
TYP. (1)
-0.01 ---
MAX.
-0.40 ---
UNITS
V uA ns ns
1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE Controlled )
Data Retention Mode
Vcc
VIH
Vcc
VDR 1.5V
Vcc
t CDR
CE Vcc - 0.2V
tR
VIH
CE
R0201-BS62LV2565
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Revision 2.3 Jan. 2004
BSI
AC TEST CONDITIONS
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Vcc/0V 1V/ns 0.5Vcc
WAVEFORM INPUTS
BS62LV2565
KEY TO SWITCHING WAVEFORMS
OUTPUTS MUST BE STEADY WILL BE CHANGE FROM H TO L WILL BE CHANGE FROM L TO H CHANGE : STATE UNKNOWN CENTER LINE IS HIGH IMPEDANCE "OFF "STATE
MUST BE STEADY MAY CHANGE FROM H TO L
1928
AC TEST LOADS AND WAVEFORMS
5.0V OUTPUT
100PF
INCLUDING JIG AND SCOPE
1928
5.0V OUTPUT
MAY CHANGE FROM L TO H DON T CARE: ANY CHANGE PERMITTED DOES NOT APPLY
,
5PF 1020
INCLUDING JIG AND SCOPE
1020
FIGURE 1A
THEVENIN EQUIVALENT 667
FIGURE 1B
OUTPUT
1.73V
ALL INPUT PULSES
Vcc GND
10%
90% 90%
10%
5ns
FIGURE 2
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc=5V )
READ CYCLE
JEDEC PARAMETER PARAMETER NAME NAME DESCRIPTION
Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Select to Output Low Z Output Enable to Output in Low Z Chip Deselect to Output in High Z Output Disable to Output in High Z Data Hold from Address Change CYCLE TIME : 55ns MIN. TYP. MAX. CYCLE TIME : 70ns MIN. TYP. MAX.
UNIT
ns ns ns ns ns ns ns ns ns
tAVAX tAVQV tELQV tGLQV tELQX tGLQX tEHQZ tGHQZ tAXOX
tRC tAA tACS tOE tCLZ tOLZ tCHZ tOHZ tOH
55 ---10 10 --10
----------
-55 55 25 --30 25 --
70 ---10 10 --10
----------
-70 70 35 --35 30 --
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Revision 2.3 Jan. 2004
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
BS62LV2565
t RC
ADDRESS
t
D OUT
t
OH
AA
t OH
READ CYCLE2
(1,3,4)
CE
t t
D OUT
(5) CLZ
ACS
t CHZ
(5)
READ CYCLE3
(1,4)
t RC
ADDRESS
t
OE
AA
t OE
CE
t OH
t OLZ t ACS t CLZ
(5)
t OHZ (5) (1,5) t CHZ
D OUT
NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE = VIL. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL . 5. Transition is measured 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested.
R0201-BS62LV2565
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Revision 2.3 Jan. 2004
BSI
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc=5V )
WRITE CYCLE
JEDEC PARAMETER NAME PARAMETER NAME DESCRIPTION
Write Cycle Time Chip Select to End of Write Address Set up Time Address Valid to End of Write Write Pulse Width Write Recovery Time Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End ot Write to Output Active (CE , WE) CYCLE TIME : 55ns MIN. TYP. MAX.
BS62LV2565
CYCLE TIME : 70ns MIN. TYP. MAX.
UNIT ns ns ns ns ns ns ns ns ns ns ns
tAVAX
tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOHZ tOW
55 55 0 55 35 0 -35 0 -5
------------
------25 --25 --
70 70 0 70 45 0 -40 0 -5
------------
------30 --30 --
tE1LWH tAVWL tAVWH tWLWH tWHAX tWLOZ tDVWH tWHDX tGHOZ tWHQX
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
t
OE
(3)
WR
t CW
CE
(5)
(11)
t AW
WE
t AS
(4,10)
t WP
(2)
t OHZ
D OUT
t t
DW
DH
D IN
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Revision 2.3 Jan. 2004
BSI
WRITE CYCLE2 (1,6)
BS62LV2565
t
WC
ADDRESS
t CW
(5)
(11)
CE
t
WE
AW
t WP
(2)
t AS
(4,10)
t WHZ
D OUT
t t DW t
OW
(7)
(8)
DH
(8,9)
D IN
NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE going low to the end of write.
R0201-BS62LV2565
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Revision 2.3 Jan. 2004
BSI
ORDERING INFORMATION
BS62LV2565
Z YY
SPEED 55: 55ns 70: 70ns PKG MATERIAL -: Normal G: Green P: Pb free GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE J: SOJ S: SOP P: PDIP T: TSOP (8mm x 13.4mm) D: DICE
BS62LV2565 X X
Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments.
PACKAGE DIMENSIONS
0.020 0.005X45
WITH PLATING
b
c c1
BASE METAL
b1
SOP - 28
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Revision 2.3 Jan. 2004
BSI
PACKAGE DIMENSIONS (continued)
12(2x) 12(2x)
BS62LV2565
UNIT SYMBOL
INCH 0.04330.004 0.00450.0026 0.0390.002 0.0090.002 0.0080.001 0.004 ~ 0.008 0.004 ~ 0.006 0.4650.004 0.3150.004 0.0220.004 0.5280.008 0.0197 +0.008 - 0.004 0.03150.004 0.004 Max. 0~ 8
MM 1.100.10 0.1150.065 1.000.05 0.220.05 0.200.03 0.10 ~ 0.21 0.10 ~ 0.16 11.800.10 8.000.10 0.550.10 13.400.20 0.50 +0.20 - 0.10 0.800.10 0.1 Max. 0~ 8
A A1 A2
HD
c L
1 28 E
e
b b1 c c1 D E e HD L L1
GAUGE PLANE A 0.254
b
Seating Plane
y
14
15
12 (2X)
"A"
D
y 0
A2
A
0 A1 14 15 SEATING PLANE A 12 (2X) L
"A" DATAIL VIEW
L1
WITH PLATING
1 28
b
c c1
BASE METAL
b1
SECTION A-A
TSOP - 28
PDIP - 28
R0201-BS62LV2565
9
Revision 2.3 Jan. 2004
BSI
PACKAGE DIMENSIONS (continued)
BS62LV2565
SOJ - 28
R0201-BS62LV2565
10
Revision 2.3 Jan. 2004

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